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SST39SF020A-70-4C-WHE Datasheet

  • SST39SF020A-70-4C-WHE

  • 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

  • 24頁

  • SST   SST

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories
Data Sheet
FEATURES:
鈥?Organized as 128K x8 / 256K x8 / 512K x8
鈥?Single 4.5-5.5V Read and Write Operations
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption
(typical values at 14 MHz)
鈥?Active Current: 10 mA (typical)
鈥?Standby Current: 30 碌A(chǔ) (typical)
鈥?Sector-Erase Capability
鈥?Uniform 4 KByte sectors
鈥?Fast Read Access Time:
鈥?45 ns
鈥?70 ns
鈥?Latched Address and Data
鈥?Fast Erase and Byte-Program
鈥?Sector-Erase Time: 18 ms (typical)
鈥?Chip-Erase Time: 70 ms (typical)
鈥?Byte-Program Time: 14 碌s (typical)
鈥?Chip Rewrite Time:
2 seconds (typical) for SST39SF010A
4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?TTL I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?32-lead PLCC
鈥?32-lead TSOP (8mm x 14mm)
鈥?32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose
Flash (MPF) manufactured with SST鈥檚 proprietary, high
performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39SF010A/020A/040 devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST39SF010A/020A/040 devices conform to JEDEC stan-
dard pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39SF010A/020A/040 devices provide a maximum
Byte-Program time of 20 碌sec. These devices use Toggle
Bit or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 10,000 cycles. Data retention is rated
at greater than 100 years.
The SST39SF010A/020A/040 devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during erase and program than alter-
native flash technologies. The total energy consumed is a
漏2003 Silicon Storage Technology, Inc.
S71147-06-000
8/04
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39SF010A/020A/040 are offered in 32-lead PLCC and
32-lead TSOP packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1, 2, and 3 for pin assignments.

SST39SF020A-70-4C-WHE 產(chǎn)品屬性

  • SST Serial and Parallel Flash Memory

  • 208

  • 集成電路 (IC)

  • 存儲器

  • SST39 MPF™

  • 閃存

  • FLASH

  • 2M (256K x 8)

  • 70ns

  • 并聯(lián)

  • 4.5 V ~ 5.5 V

  • 0°C ~ 70°C

  • 32-TFSOP（0.488"，12.40mm 寬）

  • 32-TSOP

  • 托盤

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