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SST39VF160-70-4I-EK Datasheet

  • SST39VF160-70-4I-EK

  • 16 Mbit (x16) Multi-Purpose Flash

  • 26頁

  • SST   SST

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16 Mbit (x16) Multi-Purpose Flash
SST39LF160 / SST39VF160
SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories
Data Sheet
FEATURES:
鈥?Organized as 1M x16
鈥?Single Voltage Read and Write Operations
鈥?3.0-3.6V for SST39LF160
鈥?2.7-3.6V for SST39VF160
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption
鈥?Active Current: 15 mA (typical)
鈥?Standby Current: 4 碌A(chǔ) (typical)
鈥?Auto Low Power Mode: 4 碌A(chǔ) (typical)
鈥?Sector-Erase Capability
鈥?Uniform 2 KWord sectors
鈥?Fast Read Access Time
鈥?55 ns for SST39LF160
鈥?70 and 90 ns for SST39VF160
鈥?Latched Address and Data
鈥?Fast Erase and Word-Program
鈥?Sector-Erase Time: 18 ms (typical)
鈥?Block-Erase Time: 18 ms (typical)
鈥?Chip-Erase Time: 70 ms (typical)
鈥?Word-Program Time: 14 碌s (typical)
鈥?Chip Rewrite Time: 15 seconds (typical) for
SST39LF/VF160
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?CMOS I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?48-lead TSOP (12mm x 20mm)
鈥?48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39LF/VF160 devices are 1M x16 CMOS Multi-
Purpose Flash (MPF) manufactured with SST鈥檚 proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39LF160 write (Program or
Erase) with a 3.0-3.6V power supply. The SST39VF160
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for x16
memories.
Featuring high performance Word-Program, the SST39LF/
VF160 devices provide a typical Word-Program time of 14
碌sec.These devices use Toggle Bit or Data# Polling to indi-
cate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
The SST39LF/VF160 devices are suited for applications
that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system appli-
cations, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
漏2001 Silicon Storage Technology, Inc.
S71145-02-000 6/01
399
1
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39LF/VF160 are offered in 48-lead TSOP and 48-ball
TFBGA packages. See Figure 1 for pinouts.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST39VF160-70-4I-EK 產(chǎn)品屬性

  • Microchip

  • 閃存

  • 16 bit

  • NOR

  • 16 Mbit

  • Sectored

  • CFI

  • 70 ns

  • 3.6 V

  • 2.7 V

  • 20 mA

  • + 85 C

  • SMD/SMT

  • TSOP-48

  • Tray

  • 1 MB x 8

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