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SST36VF1601G-70-4C-EKE Datasheet

  • SST36VF1601G-70-4C-EKE

  • 16 Mbit (x8/x16) Concurrent SuperFlash

  • 935.98KB

  • 36頁

  • SST   SST

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16 Mbit (x8/x16) Concurrent SuperFlash
SST36VF1601G / SST36VF1602G
SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash
Data Sheet
FEATURES:
鈥?Organized as 1M x16 or 2M x8
鈥?Dual Bank Architecture for Concurrent
Read/Write Operation
鈥?16 Mbit Bottom Sector Protection
- SST36VF1601G: 4 Mbit + 12 Mbit
鈥?16 Mbit Top Sector Protection
- SST36VF1602G: 12 Mbit + 4 Mbit
鈥?Single 2.7-3.6V for Read and Write Operations
鈥?Superior Reliability
鈥?Endurance: 100,000 cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption:
鈥?Active Current: 6 mA typical
鈥?Standby Current: 4 碌A(chǔ) typical
鈥?Auto Low Power Mode: 4 碌A(chǔ) typical
鈥?Hardware Sector Protection/WP# Input Pin
鈥?Protects the 4 outermost sectors (8 KWord)
in the smaller bank by driving WP# low and
unprotects by driving WP# high
鈥?Hardware Reset Pin (RST#)
鈥?Resets the internal state machine to reading
array data
鈥?Byte# Pin
鈥?Selects 8-bit or 16-bit mode
鈥?Sector-Erase Capability
鈥?Uniform 2 KWord sectors
鈥?Chip-Erase Capability
鈥?Block-Erase Capability
鈥?Uniform 32 KWord blocks
鈥?Erase-Suspend / Erase-Resume Capabilities
鈥?Security ID Feature
鈥?SST: 128 bits
鈥?User: 256 Byte
鈥?Fast Read Access Time
鈥?70 ns
鈥?Latched Address and Data
鈥?Fast Erase and Program (typical):
鈥?Sector-Erase Time: 18 ms
鈥?Block-Erase Time: 18 ms
鈥?Chip-Erase Time: 35 ms
鈥?Program Time: 7 碌s
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?Ready/Busy# pin
鈥?CMOS I/O Compatibility
鈥?Conforms to Common Flash Memory Interface (CFI)
鈥?JEDEC Standards
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?48-ball TFBGA (6mm x 8mm)
鈥?48-lead TSOP (12mm x 20mm)
鈥?56-ball LFBGA (8mm x 10mm)
鈥?All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST36VF1601G and SST36VF1602G are 1M x16 or
2M x8 CMOS Concurrent Read/Write Flash Memory man-
ufactured with SST proprietary, high performance CMOS
SuperFlash memory technology. The split-gate cell design
and thick oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The devices write (Program or Erase) with a 2.7-3.6V
power supply and conform to JEDEC standard pinouts for
x8/x16 memories.
Featuring high performance Program, the SST36VF160xG
provide a typical Program time of 7 碌sec and use Toggle
Bit, Data# Polling, or RY/BY# to detect the completion of
the Program or Erase operation. To protect against inad-
vertent write, the devices have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
These devices are suited for applications that require con-
venient and economical updating of program, configura-
tion, or data memory. For all system applications, the
SST36VF160xG significantly improve performance and
reliability, while lowering power consumption. These
devices inherently use less energy during Erase and Pro-
gram than alternative flash technologies, because the total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. For any given voltage range,
the SuperFlash technology uses less current to program
and has a shorter erase time; therefore, the total energy
consumed during any Erase or Program operation is less
than alternative flash technologies.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
CSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
漏2006 Silicon Storage Technology, Inc.
S71342-00-000
12/06
1

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