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SST29LE020-200-4C-NH Datasheet

  • SST29LE020-200-4C-NH

  • EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC

  • 26頁

  • ETC

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2 Mbit (256K x8) Page-Write EEPROM
SST29EE020 / SST29LE020 / SST29VE020
SST29EE / LE / VE0202Mb Page-Write flash memories
Data Sheet
FEATURES:
鈥?Single Voltage Read and Write Operations
鈥?4.5-5.5V for SST29EE020
鈥?3.0-3.6V for SST29LE020
鈥?2.7-3.6V for SST29VE020
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption
鈥?Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
鈥?Standby Current: 10 碌A(chǔ) (typical)
鈥?Fast Page-Write Operation
鈥?128 Bytes per Page, 2048 Pages
鈥?Page-Write Cycle: 5 ms (typical)
鈥?Complete Memory Rewrite: 10 sec (typical)
鈥?Effective Byte-Write Cycle Time: 39 碌s (typical)
鈥?Fast Read Access Time
鈥?4.5-5.5V operation: 120 and 150 ns
鈥?3.0-3.6V operation: 200 and 250 ns
鈥?2.7-3.6V operation: 200 and 250 ns
鈥?Latched Address and Data
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End of Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?Hardware and Software Data Protection
鈥?Product Identification can be accessed via
Software Operation
鈥?TTL I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?32-lead PLCC
鈥?32-lead TSOP (8mm x 14mm, 8mm x 20mm)
鈥?32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write
EEPROM manufactured with SST鈥檚 proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE020 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE020 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE020 provide a typical Byte-Write time of 39 碌sec. The
entire memory, i.e., 256 KBytes, can be written page-by-
page in as little as 10 seconds, when using interface fea-
tures such as Toggle Bit or Data# Polling to indicate the
completion of a Write cycle. To protect against inadvertent
write, the SST29EE/LE/VE020 have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST29EE/LE/VE020 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST29EE/LE/VE020 are suited for applications
that require convenient and economical updating of
program, configuration, or data memory. For all sys-
tem applications, the SST29EE/LE/VE020 significantly
improve performance and reliability, while lowering
power consumption. The
SST29EE/LE/VE020
improve flexibility while lowering the cost for program,
data, and configuration storage applications.
To meet high density, surface mount requirements, the
SST29EE/LE/VE020 are offered in 32-lead PLCC and
32-lead TSOP packages. A 600-mil, 32-pin PDIP pack-
age is also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE020 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE020 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE020 are compatible with industry standard EEPROM
pinouts and functionality.
漏2002 Silicon Storage Technology, Inc.
S71062-06-000 2/02
307
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST29LE020-200-4C-NH 產(chǎn)品屬性

  • Greenliant

  • 2 Mbit

  • Parallel

  • 200 ns

  • 3.6 V

  • 3 V

  • 15 mA

  • SMD/SMT

  • PLCC-32

  • Tube

  • 256 K x 8

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