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SST25VF512-20-4C-QAE Datasheet

  • SST25VF512-20-4C-QAE

  • 512 Kbit SPI Serial Flash

  • 23頁(yè)

  • SST   SST

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512 Kbit SPI Serial Flash
SST25VF512
SST25VF512512Kb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
鈥?Single 2.7-3.6V Read and Write Operations
鈥?Serial Interface Architecture
鈥?SPI Compatible: Mode 0 and Mode 3
鈥?20 MHz Max Clock Frequency
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption:
鈥?Active Read Current: 7 mA (typical)
鈥?Standby Current: 8 碌A(chǔ) (typical)
鈥?Flexible Erase Capability
鈥?Uniform 4 KByte sectors
鈥?Uniform 32 KByte overlay blocks
鈥?Fast Erase and Byte-Program:
鈥?Chip-Erase Time: 70 ms (typical)
鈥?Sector- or Block-Erase Time: 18 ms (typical)
鈥?Byte-Program Time: 14 碌s (typical)
鈥?Auto Address Increment (AAI) Programming
鈥?Decrease total chip programming time over
Byte-Program operations
鈥?End-of-Write Detection
鈥?Software Status
鈥?Hold Pin (HOLD#)
鈥?Suspends a serial sequence to the memory
without deselecting the device
鈥?Write Protection (WP#)
鈥?Enables/Disables the Lock-Down function of the
status register
鈥?Software Write Protection
鈥?Write protection through Block-Protection bits in
status register
鈥?Packages Available
鈥?8-lead SOIC (4.9mm x 6mm)
鈥?8-contact WSON
PRODUCT DESCRIPTION
SST鈥檚 serial flash family features a four-wire, SPI-compati-
ble interface that allows for a low pin-count package occu-
pying less board space and ultimately lowering total system
costs. SST25VF512 SPI serial flash memory is manufac-
tured with SST鈥檚 proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25VF512 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash memory technologies. The SST25VF512
device operates with a single 2.7-3.6V power supply.
The SST25VF512 device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
漏2004 Silicon Storage Technology, Inc.
S71192-06-000
4/04
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST25VF512-20-4C-QAE 產(chǎn)品屬性

  • Microchip

  • 閃存

  • NAND

  • 512 Kbit

  • Sectored

  • SPI

  • 20 ns

  • 3.6 V

  • 2.7 V

  • 10 mA

  • + 70 C

  • SMD/SMT

  • WSON-8

  • Tube

  • 64 KB x 8

  • 98

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