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SST25VF032B-50-4I-S2AF Datasheet

  • SST25VF032B-50-4I-S2AF

  • 32 Mbit SPI Serial Flash

  • 736.48KB

  • 28頁

  • SST   SST

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32 Mbit SPI Serial Flash
SST25VF032B
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
FEATURES:
鈥?Single Voltage Read and Write Operations
鈥?2.7-3.6V
鈥?Serial Interface Architecture
鈥?SPI Compatible: Mode 0 and Mode 3
鈥?High Speed Clock Frequency
鈥?50 MHz Max
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption:
鈥?Active Read Current: 10 mA (typical)
鈥?Standby Current: 5 碌A(chǔ) (typical)
鈥?Flexible Erase Capability
鈥?Uniform 4 KByte sectors
鈥?Uniform 32 KByte overlay blocks
鈥?Uniform 64 KByte overlay blocks
鈥?Fast Erase and Byte-Program:
鈥?Chip-Erase Time: 35 ms (typical)
鈥?Sector-/Block-Erase Time: 18 ms (typical)
鈥?Byte-Program Time: 7 碌s (typical)
鈥?Auto Address Increment (AAI) Word Programming
鈥?Decrease total chip programming time over
Byte-Program operations
鈥?End-of-Write Detection
鈥?Software polling the BUSY bit in Status Register
鈥?Busy Status readout on SO pin
鈥?Hold Pin (HOLD#)
鈥?Suspends a serial sequence to the memory
without deselecting the device
鈥?Write Protection (WP#)
鈥?Enables/Disables the Lock-Down function of the
status register
鈥?Software Write Protection
鈥?Write protection through Block-Protection bits in
status register
鈥?Temperature Range
鈥?Commercial: 0擄C to +70擄C
鈥?Industrial: -40擄C to +85擄C
鈥?Packages Available
鈥?8-lead SOIC (200 mils)
鈥?16-lead SOIC (300 mils)
鈥?All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. SST25VF032B SPI serial flash
memories are manufactured with SST鈥檚 proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF032B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF032B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF032B device is offered in both 8-lead SOIC
(200 mils) and 16-lead SOIC (300 mils) packages. See Fig-
ures 2 and 3 for pin assignments.
漏2006 Silicon Storage Technology, Inc.
S71327-00-000
10/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

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