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SST25VF020-20-4C-QAE Datasheet

  • SST25VF020-20-4C-QAE

  • 2 Mbit / 4 Mbit SPI Serial Flash

  • 23頁

  • SST   SST

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2 Mbit SPI Serial Flash
SST25VF020
SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
鈥?Single 2.7-3.6V Read and Write Operations
鈥?Serial Interface Architecture
鈥?SPI Compatible: Mode 0 and Mode 3
鈥?20 MHz Max Clock Frequency
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption:
鈥?Active Read Current: 7 mA (typical)
鈥?Standby Current: 8 碌A(chǔ) (typical)
鈥?Flexible Erase Capability
鈥?Uniform 4 KByte sectors
鈥?Uniform 32 KByte overlay blocks
鈥?Fast Erase and Byte-Program:
鈥?Chip-Erase Time: 70 ms (typical)
鈥?Sector- or Block-Erase Time: 18 ms (typical)
鈥?Byte-Program Time: 14 碌s (typical)
鈥?Auto Address Increment (AAI) Programming
鈥?Decrease total chip programming time over
Byte-Program operations
鈥?End-of-Write Detection
鈥?Software Status
鈥?Hold Pin (HOLD#)
鈥?Suspends a serial sequence to the memory
without deselecting the device
鈥?Write Protection (WP#)
鈥?Enables/Disables the Lock-Down function of the
status register
鈥?Software Write Protection
鈥?Write protection through Block-Protection bits in
status register
鈥?Temperature Range
鈥?Commercial: 0擄C to +70擄C
鈥?Industrial: -40擄C to +85擄C
鈥?Extended: -20擄C to +85擄C
鈥?Packages Available
鈥?8-lead SOIC 150 mil body width
鈥?8-contact WSON (5mm x 6mm)
鈥?All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST serial flash family features a four-wire, SPI-
compatible interface that allows for a low pin-count pack-
age occupying less board space and ultimately lowering
total system costs. SST25VF020 SPI serial flash memo-
ries are manufactured with SST鈥檚 proprietary, high perfor-
mance CMOS SuperFlash Technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF020 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to
program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25VF020 device operates with a single 2.7-3.6V
power supply.
The SST25VF020 device is offered in an 8-lead SOIC 150
mil body width (SA) package, and in an 8-contact WSON
package. See Figure 2 for the pin assignments.
漏2006 Silicon Storage Technology, Inc.
S71231-07-000
10/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST25VF020-20-4C-QAE 產(chǎn)品屬性

  • 98

  • 集成電路 (IC)

  • 存儲器

  • SST25

  • 閃存

  • FLASH

  • 2M (256K x 8)

  • 20MHz

  • SPI 串行

  • 2.7 V ~ 3.6 V

  • 0°C ~ 70°C

  • 8-WDFN 裸露焊盤

  • 8-WSON

  • 管件

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