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SST12LP15A-QVCE-K Datasheet

  • SST12LP15A-QVCE-K

  • 2.4 GHz High-Power and High-Gain Power Amplifier

  • 13頁

  • SST   SST

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2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
SST-GP1215A2.4 GHz High Gain High Power PA
Data Sheet
FEATURES:
鈥?/div>
High Gain:
鈥?Typically 32 dB gain across 2.4鈥?.5 GHz over
temperature 0擄C to +85擄C
High linear output power:
鈥?>29 dBm P1dB
- Please refer to 鈥淎bsolute Maximum Stress
Ratings鈥?on page 4
鈥?Meets 802.11g OFDM ACPR requirement up to
25 dBm
鈥?Added EVM~4% up to 23 dBm for
54 Mbps 802.11g signal
鈥?Added EVM~3.5% up to 23 dBm for
application over 2.3鈥?.4 GHz or
2.5鈥?.6 GHz WiBro/WiMax frequency bands
鈥?Meets 802.11b ACPR requirement up to 25 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
鈥?~26%/300 mA @ P
OUT
= 24 dBm for 802.11g
鈥?~27%/350 mA @ P
OUT
= 25 dBm for 802.11b
Built-in Ultra-low I
REF
power-up/down control
鈥?I
REF
~2 mA
Low idle current
鈥?~70 mA I
CQ
鈥?High-speed power-up/down
鈥?Turn on/off time (10%-90%) <100 ns
鈥?Typical power-up/down delay with driver delay
included <200 ns
鈥?High temperature stability
鈥?~1 dB gain/power variation between 0擄C to +85擄C
鈥?~1 dB detector variation over 0擄C to +85擄C
鈥?Low shut-down current (< 0.1 碌A(chǔ))
鈥?On-chip power detection
鈥?25 dB dynamic range on-chip power detection
鈥?Simple input/output matching
鈥?Packages available
鈥?16-contact VQFN (3mm x 3mm)
鈥?All non-Pb (lead-free) devices are RoHS compliant
鈥?/div>
鈥?/div>
APPLICATIONS:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
鈥?/div>
鈥?/div>
PRODUCT DESCRIPTION
The SST12LP15A is a high-power and high-gain power
amplifier based on the highly-reliable InGaP/GaAs HBT
technology.
The SST12LP15A can be easily configured for high-power
applications with superb power-added efficiency while
operating over the 2.4-2.5 GHz frequency band. It typically
provides 32 dB gain with 26% power-added efficiency @
P
OUT
= 24 dBm for 802.11g and 27% power-added effi-
ciency @ P
OUT
= 25 dBm for 802.11b.
The SST12LP15A has excellent linearity, typically ~4%
added EVM at 23 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 25 dBm. This device can be configured for
applications with an added EVM of approximately 3.5%, up
to 23 dBm over 2.3鈥?.4 GHz or 2.5鈥?.6 GHz WiBro/
WiMax frequency bands. SST12LP15A also has wide-
range (>25 dB), temperature-stable (~1 dB over 85擄C), sin-
gle-ended/differential power detectors which lower users鈥?/div>
cost on power control.
漏2006 SST Communications Corp.
S71291-02-000
7/06
1
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I
REF
~2 mA) makes the
SST12LP15A controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST12LP15A ideal for
the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP15A is offered in 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

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