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SST12LP14C-QVCE Datasheet

  • SST12LP14C-QVCE

  • 2.4 GHz High-Power, High-Gain Power Amplifier

  • 14頁(yè)

  • SST   SST

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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
SST-GP1214A2.4 GHz High Gain High Power PA
Preliminary Specifications
FEATURES:
鈥?/div>
High Gain:
鈥?Typically 32 dB gain across 2.4~2.5 GHz over
temperature 0擄C to +85擄C
High linear output power:
鈥?>26 dBm P1dB
- Please refer to 鈥淎bsolute Maximum Stress
Ratings鈥?on page 4
鈥?Meets 802.11g OFDM ACPR requirement up to
23 dBm
鈥?~4% added EVM up to 20 dBm for 54 Mbps
802.11g signal
鈥?Meets 802.11b ACPR requirement up to 22.5
dBm
High power-added efficiency/Low operating
current for both 802.11b/g applications
鈥?~29%/205 mA @ P
OUT
= 23 dBm for 802.11g
鈥?~27%/195 mA @ P
OUT
= 22.5 dBm for 802.11b
Single-pin low I
REF
power-up/-down control
鈥?I
REF
<2 mA
Low idle current
鈥?~100 mA I
CQ
High-speed power-up/-down
鈥?Turn on/off time (10%- 90%) <100 ns
鈥?Typical power-up/-down delay with driver delay
included <200 ns
鈥?High temperature stability
鈥?~1 dB power variation between 0擄C to +85擄C
鈥?Low shut-down current (< 0.1 碌A(chǔ))
鈥?Excellent On-chip power detection
鈥?<+/- 0.5dB variation between 0擄C to +85擄C
鈥?<+/- 0.3dB variation Ch1 through Ch14
鈥?20 dB dynamic range on-chip power detection
鈥?Simple input/output matching
鈥?Packages available
鈥?16-contact VQFN 鈥?3mm x 3mm
鈥?All non-Pb (lead-free) devices are RoHS compliant
鈥?/div>
鈥?/div>
APPLICATIONS:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
WLAN (IEEE 802.11b/g)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
鈥?/div>
鈥?/div>
鈥?/div>
PRODUCT DESCRIPTION
The SST12LP14C is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14C can be easily configured for high-power
applications with good power-added efficiency (PAE) while
operating over the 2.4- 2.5 GHz frequency band. It typically
provides 32 dB gain with 29% PAE @ P
OUT
= 23 dBm for
802.11g and 27% power-added efficiency @ P
OUT
= 22.5
dBm for 802.11b.
This power amplifier has excellent linearity, typically ~4%
added EVM at 20 dBm output power. This is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask up to 23 dBm.
The SST12LP14C also features easy board-level usage
along with high-speed power-up/-down control through a
single combined reference voltage pin. Ultra-low reference
current (total I
REF
~2 mA) makes the SST12LP14C control-
lable by an on/off switching signal directly from the base-
band chip. These features coupled with low operating
current make the this device ideal for the final stage power
amplification in battery-powered 802.11b/g WLAN transmit-
ter applications.
This power amplifier has an excellent on-chip and single-
ended power detector, which features a wide range
(>15 dB) with dB-wise linearization and high stability over
temperature (+/-0.5 dB 0擄C to +85擄C), and over frequency
(<+/-0.3 dB across Channels 1 through 14). The on-chip
power detector provides a reliable solution to board-level
power control.
The SST12LP14C is offered in 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
漏2007 Silicon Storage Technology, Inc.
S71353-00-000
02/07
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST12LP14C-QVCE 產(chǎn)品屬性

  • 3,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 2.4GHz ~ 2.485GHz

  • 26dBm（398.1mW）

  • 32dB

  • -

  • 802.11b/g

  • 3 V ~ 3.6 V

  • 230mA

  • 2.4GHz ~ 2.485GHz

  • 16-VFQFN 裸露焊盤(pán)

  • 帶卷 (TR)

  • SST12LP14C-QVCETR

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