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SST12LP14-QVCE Datasheet

  • SST12LP14-QVCE

  • 2.4 GHz Power Amplifier

  • 12頁(yè)

  • SST   SST

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2.4 GHz Power Amplifier
SST12LP14
SST12LP142.4 GHz Power Amplifier
Preliminary Specifications
FEATURES:
鈥?/div>
High Gain:
鈥?Typically 30 dB gain across 2.4~2.5 GHz over
temperature 0擄C to +80擄C
High linear output power:
鈥?>26.5 dBm P1dB
鈥?Meets 802.11g OFDM ACPR requirement up to
23 dBm
鈥?Added EVM ~4% up to 20 dBm for
54 Mbps 802.11g signal
鈥?Meets 802.11b ACPR requirement up to 24 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
鈥?~22% @ P
OUT
= 22 dBm for 802.11g
鈥?~26% @ P
OUT
= 23.5 dBm for 802.11b
Built-in Ultra-low I
REF
power-up/down control
鈥?I
REF
<4 mA
Low idle current
鈥?~60 mA I
CQ
High-speed power-up/down
鈥?Turn on/off time (10%~90%) <100 ns
鈥?Typical power-up/down delay with driver delay
included <200 ns
鈥?High temperature stability
鈥?~1 dB gain/power variation between 0擄C to +80擄C
鈥?~1 dB detector variation over 0擄C to +80擄C
鈥?Low shut-down current (< 0.1 碌A(chǔ))
鈥?On-chip power detection
鈥?25 dB dynamic range on-chip power detection
鈥?Simple input/output matching
鈥?Packages available
鈥?16-contact VQFN (3mm x 3mm)
鈥?Non-Pb (lead-free) packages available
鈥?/div>
鈥?/div>
APPLICATIONS:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
鈥?/div>
鈥?/div>
鈥?/div>
PRODUCT DESCRIPTION
The SST12LP14 is a high-performance power amplifier IC
based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the 2.4~2.5 GHz frequency
band. It typically provides 30 dB gain with 22% power-
added efficiency @ P
OUT
= 22 dBm for 802.11g and 27%
power-added efficiency @ P
OUT
= 24 dBm for 802.11b.
The SST12LP14 has excellent linearity, typically <4%
added EVM up to 20 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g
spectrum mask at 23 dBm. The SST12LP14 also has
wide-range (>25 dB), temperature-stable (~1 dB over
80擄C), single-ended/differential power detectors which
lower users鈥?cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I
REF
<4 mA) makes the
SST12LP14 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST12LP14 ideal for
the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP14 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
漏2005 SST Communications Corp.
S71279-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST12LP14-QVCE 產(chǎn)品屬性

  • 3,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 2.4GHz ~ 2.485GHz

  • 26.5dBm（446.7mW）

  • 31dB

  • -

  • 802.11g

  • 3 V ~ 4.2 V

  • 340mA

  • 2.4GHz ~ 2.485GHz

  • 16-VFQFN 裸露焊盤(pán)

  • 帶卷 (TR)

  • SST12LP14-QVCETR

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