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SST12LP07-QVCE Datasheet

  • SST12LP07-QVCE

  • 2.4 GHz High-Power, High-Gain Power Amplifier

  • 14頁

  • SST   SST

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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
SST12LP072.4 GHz High Gain High Power PA
Preliminary Specifications
FEATURES:
鈥?/div>
High Gain:
鈥?Typically 29 dB gain across 2.4鈥?.5 GHz over
temperature 0擄C to +85擄C
High linear output power:
鈥?>26 dBm P1dB
- Please refer to 鈥淎bsolute Maximum Stress
Ratings鈥?on page 4
鈥?Meets 802.11g OFDM ACPR requirement up to
22 dBm
鈥?~2.5% added EVM up to 19 dBm for
54 Mbps 802.11g signal
鈥?Meets 802.11b ACPR requirement up to 22 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
鈥?~22%/220 mA @ P
OUT
= 22 dBm for 802.11g
鈥?~21%/230 mA @ P
OUT
= 22 dBm for 802.11b
Single-pin low I
REF
power-up/down control
鈥?I
REF
<2 mA
Low idle current
鈥?~70 mA I
CQ
High-speed power-up/down
鈥?Turn on/off time (10%- 90%) <100 ns
鈥?Typical power-up/down delay with driver delay
included <200 ns
鈥?High temperature stability
鈥?~1 dB gain/power variation between 0擄C to +85擄C
鈥?Low shut-down current (< 0.1 碌A(chǔ))
鈥?Excellent On-chip power detection
鈥?<+/- 0.3dB variation between 0擄C to +85擄C
鈥?<+/- 0.4dB variation with 2:1 VSWR mismatch
鈥?<+/- 0.3dB variation Ch1 through Ch14
鈥?20 dB dynamic range on-chip power detection
鈥?Simple input/output matching
鈥?Packages available
鈥?16-contact VQFN 鈥?3mm x 3mm
鈥?All non-Pb (lead-free) devices are RoHS compliant
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
APPLICATIONS:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07 can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. This device
typically provides 29 dB gain with 22% power-added effi-
ciency @ P
OUT
= 22 dBm for 802.11g and 21% power-
added efficiency @ P
OUT
= 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5%
added EVM at 19 dBm output power which is essential for
54 Mbps 802.11g/n operation while meeting 802.11g spec-
trum mask at 22 dBm. The SST12LP07 can also be config-
ured for high-efficiency operation, typically 17 dBm linear 54
Mbps 802.11g output power at 85 mA total power con-
sumption. High-efficiency operation is desirable in embed-
ded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total I
REF
~2 mA) makes the SST12LP07 controlla-
漏2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
ble by an on/off switching signal directly from the baseband
chip. These features coupled with low operating current
make the SST12LP07 ideal for the final stage power ampli-
fication in battery-powered 802.11g/b WLAN transmitter
applications.
The SST12LP07 has an excellent on-chip, single-ended
power detector, which features wide-range (~20 dB) with
dB-wise linearization and high stability over temperature (<
+/-0.3 dB 0擄C to +85擄C), frequency (<+/-0.3 dB across
Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent on-
chip power detector provides a reliable solution to
board-level power control.
The SST12LP07 is offered in a 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.

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