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SSM5N15FE Datasheet

  • SSM5N15FE

  • High Speed Switching Applications

  • 176.70KB

  • 5頁(yè)

  • TOSHIBA

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SSM5N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FE
High Speed Switching Applications
Analog Switch Applications
鈥?/div>
鈥?/div>
Small package
Low ON resistance : R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 7.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
Unit: mm
(Q1, Q2 Common)
Drain-Source voltage
Gate-Source voltage
Drain current
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Symbol
V
DS
V
GSS
DC
Pulse
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
30
鹵20
100
200
150
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 0.135 mm
脳
5)
0.3 mm
Note:
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2P1B
Weight: 0.003 g (typ.)
Marking
5
4
0.45 mm
Equivalent Circuit
(top view)
5
4
DP
1
2
3
Q1
Q2
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

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