鈥?/div>
Small package
Low ON-resistance
: R
on
=
3.3
惟
(max) (@V
GS
=
4.5 V)
0.95 0.95
2.9鹵0.2
+0.5
2.5-0.3
+0.25
1.5-0.15
+0.1
0.4-0.05
3
0.3
+0.2
1.1-0.1
Unit: mm
: R
on
=
3.2
惟
(max) (@V
GS
=
5 V)
: R
on
=
3.0
惟
(max) (@V
GS
=
10 V)
1
2
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
60
鹵
20
200
800
200
150
鈭?5
to 150
Unit
V
V
mA
mW
擄C
擄C
1.9
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
S-MINI
JEDEC
1.Gate
2.Source
3.Drain
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1F
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
鈳猋
fs
鈳?/div>
Test Condition
V
GS
= 鹵
20 V, V
DS
=
0
I
D
=
0.1 mA, V
GS
=
0
V
DS
=
60 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.25 mA
V
DS
=
10 V, I
D
=
200 mA
I
D
=
500 mA, V
GS
=
10 V
Drain-source ON-resistance
R
DS (ON)
I
D
=
100 mA, V
GS
=
5 V
I
D
=
100 mA, V
GS
=
4.5 V
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on delay time
Turn-off delay time
C
iss
C
rss
C
oss
td
(on)
td
(off)
V
DD
=
30 V , I
D
=
200 mA ,
V
GS
=
0 to 10 V
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
Min
鈳?/div>
60
鈳?/div>
1.0
170
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
2.0
2.1
2.2
17
1.4
5.8
2.4
26
Max
鹵
10
鈳?/div>
1
2.5
鈳?/div>
3.0
3.2
3.3
鈳?/div>
鈳?/div>
pF
pF
pF
ns
惟
Unit
渭A
V
渭A
V
mS
鈳?/div>
鈳?/div>
鈳?/div>
0~0.1
鈳?/div>
4.0
40
1
2007-11-01
+0.1
0.16-0.06
SSM3K7002F相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
High Speed Switching Applications
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA [T...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 1.3A I(D) |...
ETC
-
英文版
HIGH SPEED SWITCHING APPLICATIONS
Toshiba
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA [T...
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
Toshiba
1
2
3
4
5
