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SSM01N60J Datasheet

  • SSM01N60J

  • N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

  • 6頁(yè)

  • ETC

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SSM01N60H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
G
D
BV
DSS
R
DS(ON)
I
D
600V
8
鈩?/div>
1.6A
S
Description
The SSM01N60H is supplied in the industry-standard TO-252
package, which is widely preferred for commercial and industrial
surface mount applications, and is well suited for AC/DC converters. The
through-hole version (SSM01N60J) is available for low-footprint applications.
G D
S
TO-252 (H)
G
D S
TO-251 (J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
=25擄C
I
D
@ T
C
=100擄C
I
DM
P
D
@ T
C
=25擄C
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
鹵
30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/ 擄C
mJ
A
mJ
擄C
擄C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.2
110
Unit
擄C/W
擄C/W
Rev.2.02 4/06/2004
www.SiliconStandard.com
1 of 6

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