鈥?/div>
High total power dissipation. (P
T
=625mW)
High Collector Current. (I
C
=500mA)
Complementary to SS9012
Excellent h
FE
linearity.
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
20
5
500
625
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=1mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=10mA
0.6
64
40
120
120
0.16
0.91
0.67
Min.
40
20
5
100
100
202
0.6
1.2
0.7
V
V
V
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE1
D
64 ~ 91
E
78 ~ 112
F
96 ~ 135
G
112 ~ 166
H
144 ~ 202
漏2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002