SS8550
SS8550
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
鈥?Complimentary to SS8050
鈥?Collector Current: I
C
=1.5A
鈥?Collector Power Dissipation: P
C
=2W (T
C
=25擄C)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-40
-25
-6
-1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -100碌A(chǔ), I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -1V, I
C
= -5mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
= -800mA, I
B
= -80mA
V
CE
= -1V, I
C
= -10mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -50mA
100
45
85
40
170
160
80
-0.28
-0.98
-0.66
15
200
Min.
-40
-25
-6
-100
-100
300
-0.5
-1.2
-1.0
V
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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