SS8050
SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
鈥?Complimentary to SS8550
鈥?Collector Current: I
C
=1.5A
鈥?Collector Power Dissipation: P
C
=2W (T
C
=25擄C)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
25
6
1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=2mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=10V, I
C
=50mA
100
45
85
40
135
160
110
0.28
0.98
0.66
9.0
190
Min.
40
25
6
100
100
300
0.5
1.2
1
V
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002