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SPN2302 Datasheet

  • SPN2302

  • N-Channel Enhancement Mode MOSFET

  • 8頁

  • ETC

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SPN2302
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
20V/3.6A,R
DS(ON)
= 80m鈩V
GS
=4.5V
20V/3.1A,R
DS(ON)
= 95m鈩V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2005/03/08
Ver.2
Page 1

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