鈥?/div>
Ultra Fast Reverse Recovery Time 30-60 ns Max
4/
PIV to 1000 Volts (1200V Version Available)
Hermetically Sealed
Low Reverse Leakage Current
Rugged Single Chip Construction
For High Efficiency Applications
Available in Axial, Round Tab & Square Tab
Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available
Ruggedized Replacement for:
1N 6620 thru 1N6625, US
FEATURES:
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
L
= 25擄C)
SYMBOL
SPD6620
SPD6621
SPD6622
SPD6623
SPD6624
SPD6625
SPD6620 thru SPD6622
SPD6623 thru SPD6625
VALUE
200
400
600
800
900
1000
2
1.5
20
-65 to +175
38
20
UNIT
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
and T
STG
R
胃JL
R
胃JE
Volts
Amps
Amps
擄C
擄C/W
Peak Surge Current
5/
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, T
C
= 25擄C)
Operating & Storage Temperature
Thermal Resistance,
NOTES:
1/
2/
3/
4/
For Ordering Information, Price, and Availability- Contact Factory.
Screened to MIL-PRF-19500.
Unless Otherwise Specified, All Electrical Characteristics @25潞C.
Recovery Conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp rec. to .25 Amp.
Junction to Lead for Axial, L =.375"
Junction to End Tab
Axial Leaded
SMS
5/
SPD6625- I
FSM
= 15A
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0102C
DOC
1
2
