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SPC6332S36RG Datasheet

  • SPC6332S36RG

  • N & P Pair Enhancement Mode MOSFET

  • 11頁

  • SYNC-POWER

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SPC6332
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6332 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
20V/0.95A,R
DS(ON)
=380m鈩V
GS
=4.5V
20V/0.75A,R
DS(ON)
=450m鈩V
GS
=2.5V
20V/0.65A,R
DS(ON)
=800m鈩V
GS
=1.8V
P-Channel
-20V/1.0A,R
DS(ON)
= 520m鈩V
GS
=-4.5V
-20V/0.8A,R
DS(ON)
= 700m鈩V
GS
=-2.5V
-20V/0.7A,R
DS(ON)
= 950m鈩V
GS
=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2007/04/25
Ver.1
Page 1

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