SFH 640
PHOTOTRANSISTOR
5.3 KV TRIOS
廬
HIGH BV
CER
VOLTAGE
OPTOCOUPLER
FEATURES
鈥?CTR at I
F
=10 mA, V
CE
=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
鈥?Good CTR Linearity with Forward Current
鈥?Low CTR Degradation
鈥?Very High Collector-Emitter Breakdown Volt-
age, BV
CER
=300 V
鈥?Isolation Test Voltage: 5300 VAC
RMS
鈥?Low Coupling Capacitance
鈥?High Common Mode Transient Immunity
鈥?Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
鈥?Field Effect Stable: TRIOS
+
V
鈥?/div>
VDE 0884 Available with Option 1
鈥?Underwriters Lab File #E52744
D E
Dimensions in inches (mm)
Pin One ID
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18擄 typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a 鈥渂etter than鈥?replacement for H11D1.
*Supplies from this group can't always be guranteed due
to unforseeable yield spread.
+
TRIOS
鈥?/div>
TR
ansparent
IO
n
S
hield
Maximum Ratings
(T
A
=25
擄
C)
Emitter
Reverse Voltage ...................................................................................6 V
DC Forward Current ....................................................................... 60 mA
Surge Forward Current (tp
鈮?/div>
10
碌
s) .................................................. 2.5 A
Total Power Dissipation ............................................................... 100 mW
Detector
Collector-Emitter Voltage ................................................................ 300 V
Collector-Base Voltage .....................................................................300 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current ........................................................................... 50 mA
Surge Collector Current (tp
鈮?/div>
1 ms) ............................................... 100 mA
Total Power Dissipation ............................................................... 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) ...................................................... 5300 VAC
RMS
/7500 VAC
PK
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C
.........................................................................鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C
.......................................................................鈮?/div>
10
11
鈩?/div>
Insulation Thickness between Emitter and Detector ..................
鈮?/div>
0.4 mm
Creepage
.................................................................................................鈮?/div>
7 mm
Clearance
.................................................................................................鈮?/div>
7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ................................................... 175
Storage Temperature Range .......................................... -55
擄
C to +150
擄
C
Operating Temperature Range....................................... -55
擄
C to +100
擄
C
Junction Temperature......................................................................100
擄
C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane
鈮?/div>
1.5 mm) .............................................260
擄
C
5鈥?
SFH640-3 產(chǎn)品屬性
Vishay
晶體管輸出光電耦合器
1 Channel
DC
300 V
0.4 V
5300 Vrms
200 %
1.5 V
50 mA
300 mW
+ 100 C
- 55 C
PDIP-6
Tube
60 mA
6 V
Phototransistor
DC
2000
SFH640-3相關(guān)型號(hào)PDF文件下載
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