鈥?/div>
VDE 0884 Available with Option 1
D E
SFH600 SERIES
Dimensions in inches (mm)
Pin One ID
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18擄 typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The SFH600 is an optocoupler with a GaAs LED
emitter which is optically coupled with a silicon pla-
nar phototransistor detector. The component is
packaged in a plastic plug-in case, 20 AB DIN
41866.
The coupler transmits signals between two electri-
cally isolated circuits. The potential difference
between the circuits to be coupled is not allowed to
exceed the maximum permissible insulating volt-
age.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current...................................... 60 mA
Surge Forward Current (t
p
=10
碌s)..................
2.5 A
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage ................................ 70 V
Emitter-Base Voltage ....................................... 7 V
Collector Current........................................... 50 mA
Collector Current (t=1 ms) .......................... 100 mA
Power Dissipation ...................................... 150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.)..............5300 VAC
RMS
Creepage......................................................鈮? mm
Clearance
.......................................................... 鈮?
mm
Isolation Thickness between Emitter &
Detector .....................................................鈮?.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
V
IO
=500 V, T
A
=25擄C...................................
鈮?0
12
鈩?/div>
V
IO
=500 V, T
A
=100擄C.................................
鈮?0
11
鈩?/div>
Storage Temperature Range........ 鈥?5擄C to +150擄C
Ambient Temperature Range....... 鈥?5擄C to +100擄C
Junction Temperature ....................................100擄C
Soldering Temperature (max. 10 s, dip
soldering: distance to seating plane
鈮?.5
mm) ....................................................260擄C
Characteristics
(T
A
=25擄C)
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling Capacitance
V
CEsat
C
IO
0.25 (鈮?.4)
0.6
V
pF
I
F
=10 mA,
I
C
=2.5 mA
V
IO
=0, f=1 MHz
pF
C
CE
C
CB
C
EB
R
THJamb
5.2
6.5
9.5
500
f=1 MHz
V
CE
=5 V
V
CB
=5 V
V
EB
=5 V
V
F
V
BR
I
R
C
O
R
THJamb
1.25 (鈮?.65)
鈮?
0.01 (鈮?0)
25
750
V
V
碌A(chǔ)
pF
I
F
=60 mA
I
R
=10
碌A(chǔ)
V
R
=6 V
V
F
=0 V, f=1 MHz
Unit
Condition
擄
C/W
擄
C/W
*TRIOS鈥擳Ransparent IOn Shield
5鈥?
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