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Maximum Ratings
Operating Temperature: -55擄C to +150擄C
Storage Temperature: -55擄C to +150擄C
Maximum Thermal Resistance;
25.0擄C/W
Junction To Lead
Microsemi
Catalog
Number
Device
Marking
Maximum
Reccurrent
Peak
Reverse
Voltage
50V
100V
200V
300V
400V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
300V
400V
D
SF500GP SF500GP
SF501GP SF501GP
SF502GP SF502GP
SF503GP SF503GP
SF504GP SF504GP
35V
70V
140V
210V
280V
A
Cathode
Mark
B
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
SF500~SF502
SF503~SF504
D
I
F(AV)
I
FSM
5.0A
150A
T
A
=
55擄C
8.3ms, half sine
C
V
F
.95V
1.25V
5.0uA
300uA
I
FM
= 5.0A;
T
A
= 25擄C*
T
A
= 25擄C
T
A
= 125擄C
Test Conditions
IF=.5A,IR=1A,Irr=.25A
DIM
A
B
C
D
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
I
R
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
T
rr
C
J
35nS
45pF
Measured at
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
碌sec,
Duty cycle 2%
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