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SDM40E20LS-7 Datasheet

  • SDM40E20LS-7

  • DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

  • 3頁

  • DIODES

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SDM40E20LS
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Very Low Forward Voltage Drop
Guard Ring Construction for
Transient Protection
High Conductance
SOT-23
Dim
A
NEW PRODUCT
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.85
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.80
8擄
A
B
C
B
C
Mechanical Data
Case: SOT-23, Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: See Diagram
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Date Code and Type Code
Type Code: KSW
Weight: 0.004 grams (approx.)
Ordering Information: See Page 3
TOP VIEW
D
E
G
H
J
K
L
M
a
E
D
G
H
K
J
L
M
All Dimensions in mm
Maximum Ratings
@ T
A
= 25擄C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Power Dissipation (Note 1)
Typical Thermal Resistance Junction to Ambient (Note 1)
Power Dissipation (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
qJA
P
d
R
qJA
T
j,
T
STG
SDM40E20LS
20
14
0.4
2
225
444
300
333
-55 to +125
Unit
V
V
A
A
mW
擄C/W
mW
擄C/W
擄C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage Drop (Note 3)
Leakage Current (Note 3)
Total Capacitance
Notes:
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
Min
20
Typ
170
Max
0.310
0.430
100
250
Unit
V
V
mA
pF
Test Conditions
I
R
= 0.5mA
I
F
= 0.1A
I
F
= 0.5A
V
R
= 10V
V
R
= 20V
f = 1MHz, V
r
= 0VDC
1. Device mounted on FR-5 1.0 x 0.75 x 0.062 inch PCB pad layout as shown on Diodes Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30298 Rev. 2 - 2
1 of 3
SDM40E20LS

SDM40E20LS-7 產(chǎn)品屬性

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • 二極管,整流器 - 陣列

  • -

  • 310mV @ 100mA

  • 250µA @ 20V

  • 400mA(DC)

  • 20V

  • -

  • 肖特基

  • 快速恢復(fù) = 200mA(Io)

  • 1 對(duì)串聯(lián)

  • 表面貼裝

  • TO-236-3,SC-59,SOT-23-3

  • SOT-23-3

  • 剪切帶 (CT)

  • SDM40E20LSDICT

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