PHOTODIODE
Si PIN photodiode
S5377/S4276 series
Large area Si PIN photodiode for direct detection
S5377/S4276 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays.
These detectors are mounted on PC boards with openings for the purpose of
鈭咵
detection of charged particles. Other Si detectors and PSDs with
different configurations, thicknesses and surface areas are also available upon request.
Features
Applications
l
Large area
l
Low dark current
l
Excellent about bias voltage tolerance
l
Heavy ions energy detection
l
X-ray detection
l
鈭咵/E
detection
s
Specifications / Absolute maximum ratings
Type No.
Active area
(mm)
S5377-04
S5377-05
S5377-02
S5377-03
S4276-02
S4276-03
28 脳 28
Chip
thickness
(碌m)
325 鹵 15
280 鹵 15
500 鹵 15
450 鹵 15
325 鹵 15
280 鹵 15
Dead layer
thickness *
1
Uniform
Surface
thickness orientation Front Rear
side side
(碌m)
(碌m) (碌m)
20
2
4.0
20
(111)
1.5
2
20
5.0
2
Absolute maximum ratings
Reverse
Operating Storage
voltage
Current
temperature
*
2
temperature
*
2
V
R
Topr
Tstg
(V)
(mA)
(擄C)
(擄C)
120
200
120
2
0 to +60
0 to +80
48 脳 48
*1: Estimated value
*2: No condensation
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
Type No.
S5377-04
S5377-05
S5377-02
S5377-03
S4276-02
S4276-03
Full depletion voltage
V
D
Max.
(V)
100
170
100
Dark current
I
D
Typ.
(nA)
10
60
30
200
20
200
Max.
(nA)
50
300
150
1000
100
1000
Rise time *
tr
(ns)
70
40
100
3
Terminal capacitance
Ct
V
R
= V
D
f=100 kHz
(pF)
300
320
190
200
860
900
*3: Rise time is the time required for transition from 10 % to 90 % of the peak output value. The light source is a dalta function
pulse of a laser diode (800 nm) and the load resistance is 50
鈩?
1
2
