S524AD0XD1/D0XF1
128K/256K-bit
Serial EEPROM
for Low Power
Data Sheet
OVERVIEW
The S524AD0XD1/D0XF1 serial EEPROM has a 128K/256K-bit (16,384/32,768 bytes) capacity, supporting the
standard I
2
C鈩?bus serial interface. It is fabricated using Samsung鈥檚 most advanced CMOS technology. It has
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 64 bytes of data into
the EEPROM in a single write operation. Another significant feature of the S524AD0XD1/D0XF1 is its support for
fast mode and standard mode.
FEATURES
I C-Bus Interface
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Two-wire serial interface
Automatic word address increment
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2
Operating Characteristics
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Operating voltage
鈥?1.8 V to 5.5 V
Operating current
鈥?Maximum write current: < 3 mA at 5.5 V
鈥?Maximum read current: < 400
碌A
at 5.5 V
鈥?Maximum stand-by current: < 1
碌A
at 5.5 V
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Operating temperature range
鈥?鈥?25擄C to + 70擄C (commercial)
鈥?鈥?40擄C to + 85擄C (industrial)
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Operating clock frequencies
鈥?400 kHz at standard mode
鈥?1 MHz at fast mode
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Electrostatic discharge (ESD)
鈥?5,000 V (HBM)
鈥?500 V (MM)
Packages
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8-pin DIP, and TSSOP
EEPROM
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
128K/256K-bit (16,384/32,768 bytes) storage
area
64-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
500,000 erase/write cycles
50 years data retention
8-1
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