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S524A40X20 Datasheet

  • S524A40X20

  • 1K/2K/4K-bit Serial EEPROM for Low Power with software write...

  • 135.09KB

  • 18頁

  • SAMSUNG   SAMSUNG

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S524A40X10/40X20/40X40
1K/2K/4K-bit
Serial EEPROM for Low Power
with software write protect
Data Sheet
OVERVIEW
The S524A40X10/40X20/40X40 serial EEPROM has a 1,024/2,048/4,096-bit (128/256/512-byte) capacity,
supporting the standard I
2
C鈩?bus serial interface. It is fabricated using Samsung鈥?most advanced CMOS
s
technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). Important features
are a hardware-based write protection circuit for the entire memory area and software-based write protection logic
for the lower 128 bytes. Hardware-based write protection is controlled by the state of the write-protect (WP) pin.
The software-based method is one-time programmable and permanent. Using one-page write mode, you can
load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the
S524A40X10/40X20/40X40 is its support for fast mode and standard mode.
FEATURES
I
2
C-Bus Interface
鈥?/div>
鈥?/div>
Two-wire serial interface
Automatic word address increment
鈥?/div>
Operating Characteristics
鈥?/div>
Operating voltage
鈥?1.8 V to 5.5 V
Operating current
鈥?Maximum write current: < 3 mA at 5.5 V
鈥?Maximum read current: < 200
碌A(chǔ)
at 5.5 V
鈥?Maximum stand-by current: < 1
碌A(chǔ)
at 5.5 V
鈥?/div>
Operating temperature range
鈥?鈥?25擄C to + 70擄C (commercial)
鈥?鈥?40擄C to + 85擄C (industrial)
鈥?/div>
Operating clock frequencies
鈥?100 kHz at standard mode
鈥?400 kHz at fast mode
鈥?/div>
Electrostatic discharge (ESD)
鈥?5,000 V (HBM)
鈥?500 V (MM)
Packages
鈥?/div>
8-pin DIP, SOP, and TSSOP
EEPROM
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1K/2K/4K-bit (128/256/512-byte) storage area
16-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
Software-based write protection for the lower
128-byte EEPROM
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
2-1

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