PHOTODIODE
Si PIN photodiode
S5106, S5107, S7509, S7510
Chip carrier package for surface mount
S5106, S5107, S7509 and S7510 are Si PIN photodiodes sealed in chip carrier packages suitable for surface mount using automated solder
reflow techniques. These photodiodes have large active areas, making them suitable for spatial light transmission where a wide field-of-view
angle is required. Other applications include POS scanners, power meters and analytical instruments.
Features
S5106: 5 脳 5 mm
S5107: 10 脳 10 mm
S7509: 2 脳 10 mm
S7510: 6 脳 11 mm
l
Ceramic chip carrier package for surface mount
l
Suitable for solder reflow
l
High sensitivity
Applications
l
Active area
l
Spatial light transmission
l
Laser radar
l
Power meter
l
Bar-code reader
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
鉃€/R
鉃?R
鉃?R
鉃?R
Active
area size
(mm)
5脳5
10 脳 10
2 脳 10
6 脳 11
Effective
active area
(mm
2
)
25
100
20
66
Reverse
voltage
V
R
Max
(V)
30
Absolute maximum ratings
Power
Operating
Storage
dissipation temperature temperature
P
Topr
Tstg
(mW)
(擄C)
(擄C)
50
-40 to +100
-40 to +125
S5106
S5107
S7509
S7510
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
Spectral Peak
response sensitivity
range wavelength
位p
位
(nm)
S5106
S5107
320 to 1100
S7509
S7510
* Window R: Resin coating
(nm)
960
0.72 0.45 0.57 0.62
Photo sensitivity
S
(A/W)
位p
660 n m 780 n m 830 n m
Short
circuit
current
Isc
100
lx
(碌A(chǔ))
27
110
22
72
Cut-off Terminal
Dark
Temp.
frequency capacitance
current
coefficient
fc
Ct
I
D
of I
D
R
L
=50
鈩?/div>
f=1 MHz
T
CID
V
R
=10 V
V
R
=10 V V
R
=10 V
Typ. Max.
(nA) (nA) (times/擄C) (MHz)
(pF)
0.4 5
20
40
0.9 10
10
150
1.15
0.5 5
20
40
1.0 10
15
80
NEP
V
R
=10 V
位=位p
(W/Hz
1/2
)
1.6 脳 10
-14
2.4 脳 10
-14
1.7 脳 10
-14
2.5 脳 10
-14
Type No.
Note) S5106, S7509: For mass production, order unit is 100 pieces.
S5107, S7510: For mass production, order unit is 50 pieces.
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