IMAGE SENSOR
NMOS linear image sensor
S3921/S3924 series
Voltage output type with current-integration readout circuit and impedance conversion circuit
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output
linearity and wide dynamic range.
S3921/S3924 series have a current-integration readout circuit utilizing the video line and an impedance conversion circuit. The output is available
in boxcar waveform allowing signal readout with a simple external circuit.
The photodiodes of S3921 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 碌m. The photodiodes of S3924 series also
have a height of 2.5 mm but are arrayed at a spacing of 25 碌m. The photodiodes are available in 3 different pixel quantities for each series, 128
(S3921-128Q), 256 (S3921-256Q, S3924-256Q) and 512 (S3921-512Q, S3924-512Q) and 1024 (S3924-1024Q). Quartz glass is the standard
window material.
Features
Applications
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Built-in current-integration readout circuit utilizing
video line capacitance and impedance conversion
circuit (boxcar waveform output)
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Wide active area
Pixel pitch: 50 碌m (S3921 series)
25 碌m (S3924 series)
Pixel height: 2.5 mm
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High UV sensitivity with good stability
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Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
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Excellent output linearity and sensitivity spatial uniformity
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Low voltage, single power supply operation
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Start pulse, clock pulse and video line reset pulse are
CMOS logic compatible
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Multichannel spectrophotometry
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Image readout system
Figure 1 Equivalent circuit
START
CLOCK
CLOCK
st
2
1
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
END OF SCAN
SOURCE FOLLOWER CIRCUIT
Vdd
ACTIVE VIDEO
Figure 2 Active area structure
2.5 mm
b
a
OXIDATION SILICON
ADDRESS
SWITCH
ACTIVE
PHOTODIODE
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
ADDRESS
SWITCH
DUMMY DIODE
RESET SWITCH
Vss
DUMMY VIDEO
1.0 碌m
1.0 碌m
400 碌m
RESET
RESET V
N TYPE SILICON
KMPDC0019EA
P TYPE SILICON
s
Absolute maximum ratings
S3921 SERIES: a=50 碌m, b=45 碌m
S3924 SERIES: a=25 碌m, b=20 碌m
KMPDA0067EA
Parameter
Supply voltage
Input pulse (蠁1,
蠁2, 蠁st)
voltage
Power consumption *
1
Operating temperature *
2
Storage temperature
*1: Vdd=5 V, Vr=2.5 V
*2: No condensation
Symbol
Vdd
V蠁
P
Topr
Tstg
Value
15
15
10
-40 to +65
-40 to +85
Unit
V
V
mW
擄C
擄C
1
2
3
4
5
6
