PHOTODIODE
Si PIN photodiode
S3590-08/-09
Large area sensors for scintillation detection
Features
Applications
l
Higher sensitivity and low dark current than conventional type
l
Sensitivity matching with BGO and CsI (TI) scintillators
l
High quantum efficiency: QE=85 % (位=540 nm)
l
Low capacitance
l
High-speed response
l
High stability
l
Good energy resolution
l
Scintillation detectors
l
Calorimeters
l
Hodoscopes
l
TOF counters
l
Air shower counters
l
Particle detectors, etc.
s
General ratings / Absolute maximum ratings
Window
material
Epoxy resin
Window-less
Active area
(mm)
S3590-08
S3590-09
10 脳 10
Depletion
layer
thickness
(mm)
0.3
Reverse
voltage
V
R
Max.
100
Absolute maximum ratings
Power
Operating
dissipation
temperature
P
Topr
(mW)
(擄C)
100
-20 to +60
Storage
temperature
Tstg
(擄C)
-20 to +80
Type No.
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
S p ectral
P e ak
response se nsitivity
range wavelength
位=位p
位
位p
(nm)
320 to
1100
(nm)
960
(A/W)
0.66
0.66
Photo sensitivity
S
S h ort
Dark
Term inal
Temp.
circuit current
C ut-off capacitance NEP
coefficient
cu rre n t
I
D
V
R
=70 V
of I
D
F reque nc y
Ct
Isc
f= 1MHz
fc
LSO BGO CsI(Tl) 100
lx
Typ. Max. T
CID
420 nm 480 nm 540 nm
1/2
(pF) (W/Hz )
(A/W) (A/W) (A/W) (碌A(chǔ)) (nA) (nA) (tim es/擄C ) (MHz)
0.20
0.30
0.36
-14
100
2* 6*
1.12
40 *
40 * 3.8 脳 10
0.22
0.33
0.41
Type No.
S3590-08
S3590-09
* V
R
=70 V
1
1
2
