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S29CL016J0JDGH017 Datasheet

  • S29CL016J0JDGH017

  • 16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst M...

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  • SPANSION   SPANSION

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S29CD016J/S29CL016J
Known Good Die
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only
Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
Supplement
(Advance Information)
General Description
The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two
separate banks. These products can operate up to 56 MHz and use a single V
CC
of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V
(S29CL-J) that make them ideal for today鈥檚 demanding automotive applications.
Distinctive Characteristics
Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
X32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
鈥?CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double
word, and Eight 2K Double Word sectors
Cycling Endurance: 100,000 write cycles per sector (typical)
Command set compatible with JECEC (42.4) standard
Supports Common Flash Interface (CFI)
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
Write operation status bits indicate program and erase
operation completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
VersatileI/O鈩?control (1.65 V to V
CC
)
Programmable Burst Interface
鈥?Linear for 2, 4, and 8 double word burst with or without wrap around
Secured Silicon Sector that can be either factory or customer
locked
20 year data retention (typical)
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max Asynch. Access Time, ns (t
ACC
)
Max Synch. Latency, ns (t
IACC
)
Max Synch. Burst Access, ns (t
BACC
)
Max CE# Access Time, ns (t
CE
)
Max OE# Access time, ns (t
OE
)
56
64
64
10
69
22
40
67
67
17
71
22
Typical Program and Erase Times
Double Word Programming
Sector Erase
18 碌s
1.0 s
Current Consumption (Max values)
Continuous Burst Read @ 56 MHz
Program
Erase
Standby Mode
90 mA
50 mA
50 mA
150 碌A(chǔ)
Publication Number
S29CD016J-CL016J_KGD_SP
Revision
A
Amendment
2
Issue Date
September 20, 2006
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.

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