S29AL016D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
PRELIMINARY
Distinctive Characteristics
Architectural Advantages
Single power supply operation
鈥?Full voltage range: 2.7 to 3.6 volt read and write op-
erations for battery-powered applications
Ultra low power consumption (typical values
at 5 MHz)
鈥?200 nA Automatic Sleep mode current
鈥?200 nA standby mode current
鈥?9 mA read current
鈥?20 mA program/erase current
Manufactured on 200nm process technology
鈥?Fully compatible with 0.23 碌m Am29LV160D and
MBM29LV160E devices
Flexible sector architecture
鈥?One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-
one 64 Kbyte sectors (byte mode)
鈥?One 8 Kword, two 4 Kword, one 16 Kword, and thirty-
one 32 Kword sectors (word mode)
Cycling endurance: 1,000,000 cycles per
sector typical
Data retention: 20 years typical
Package Options
48-ball FBGA
48-pin TSOP
44-pin SOP
Sector Protection features
鈥?A hardware method of locking a sector to prevent any
program or erase operations within that sector
鈥?Sectors can be locked in-system or via programming
equipment
鈥?Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Software Features
CFI (Common Flash Interface) compliant
鈥?Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
Unlock Bypass Program Command
鈥?Reduces overall programming time when issuing
multiple program command sequences
Erase Suspend/Erase Resume
鈥?Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Top or bottom boot block configurations
available
Compatibility with JEDEC standards
鈥?Pinout and software compatible with single-power
supply Flash
鈥?Superior inadvertent write protection
Data# Polling and toggle bits
鈥?Provides a software method of detecting program or
erase operation completion
Hardware Features
Ready/Busy# pin (RY/BY#)
鈥?Provides a hardware method of detecting program or
erase cycle completion
Performance Characteristics
High performance
鈥?Access times as fast as 70 ns
Publication Number
S29AL016D_00
Revision
A
Amendment
2
Issue Date
December 17, 2004