PHOTODIODE
Si PIN photodiode
S2744/S3588-08, -09
Large area sensors for scintillation detection
Features
q
Higher sensitivity and low dark current than conventional type
q
Sensitivity matching with BGO and CsI (TI) scintillators
q
High quantum efficiency QE=85 % (位=540 nm)
q
Low capacitance
q
High-speed response
q
High stability
q
Good energy resolution
Applications
q
Scintillation detectors
q
Calorimeters
q
Hodoscopes
q
TOF counters
q
Air shower counters
q
Particle detectors, etc.
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline
Window
material
Epoxy resin
Window-less
Epoxy resin
Window-less
Active
area
(mm)
S2744-08
S2744-09
S3588-08
S3588-09
鉃€
鉃?/div>
10 脳 20
0.3
3 脳 30
100
100
-20 to +60
-20 to +80
Depletion
layer
thickness
(mm)
Reverse
voltage
V
R
Max.
Absolute maximum ratings
Power
Operating
dissipation temperature
P
Topr
(mW)
(擄C)
Storage
temperature
Tstg
(擄C)
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
S p ectral
response
range
位
(nm)
S2744-08
S2744-09
S3588-08
S3588-09
320 to 1100
P e ak
sensitivity
wavelength
位p
(nm)
960
Photo sensitivity
S
位=位p
(A/W)
0.66
0.66
0.66
0.66
LSO
BGO
CsI(Tl)
420 nm 480 nm 540 nm
(A/W)
(A/W)
(A/W)
0.20
0.30
0.36
0.22
0.33
0.41
0.20
0.30
0.36
0.22
0.33
0.41
Dark
S h ort
Terminal
current
circuit
Temp. Cut-off capacitance
I
D
current
Ct
NEP
coefficient Frequency
V
R
=70 V
f= 1 M H z V
R
= 70 V
Isc
fc
of I
D
100
lx
Typ. Max. T
CID
V
R
= 70 V V
R
= 70 V
(碌A(chǔ))
200
3
90
10
1.12
40
40
(nA) (nA) (times/擄 C) (MHz)
25
(pF)
85
4.7 脳 10
-14
(W/Hz
1/2
)
Type No.
1
2
