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PHOTODIODE

Si photodiode

S2387 series

For visible to IR, general-purpose photometry

Features

Applications

l

High sensitivity

l

Low dark current

l

High linearity

l

Analytical equipment

l

Optical measurement equipment, etc.

s

General ratings / Absolute maximum ratings

Type No.

Dimensional

outline/

Window

material *

鉃€/R

鉃?R

鉃?R

鉃?R

鉃?R

Package

(mm)

2.7 脳 15

6 脳 7.6

8.9 脳 10.1

15 脳 16.5

3.0 脳 40

Active

area size

(mm)

1.1 脳 5.9

2.4 脳 2.4

5.8 脳 5.8

10 脳 10

1.2 脳 29.1

Effective

active area

(mm

2

)

6.4

5.7

33

100

35

Absolute maximum ratings

Operating

Storage

Reverse

temperature

temperature

voltage

Topr

Tstg

V

R

Max.

(V)

(擄C)

(擄C)

S2387-16R

S2387-33R

S2387-66R

S2387-1010R

S2387-130R

30

-20 to +60

-20 to +80

s

Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)

Spectral

response

range

位

Peak

sensi-

tivity

wave-

length

位p

(nm)

Photo sensitivity

S

(A/W)

位p

GaP

LED

Short circuit

Dark

current

current

Isc

I

D

100

lx

He-Ne

Min. Typ. V

R

=10 m V

laser

Max.

(碌A(chǔ)) (碌A(chǔ))

4.4 6.0

4.4 5.8

24

31

68

91

25

32

(pA)

5

50

200

100

1.12

Terminal

Temp.

Shunt

NEP

coeffi- Rise time capaci- resistance

tance

tr

V

R

=0 V

cient

Rsh

Ct

D

of I

位=位p

V

R

=0 V

V

R

=10 m V

T

CID

R

L

=1 k鈩?V

R

=0 V

f=10 kHz Min. Typ.

(times/擄 C) (碌s)

(pF) (G鈩? (G鈩? (W/Hz

1/2

)

1.8

10

33

11

730

2

50 9.9 脳 10

-16

Type No.

(nm)

560 nm 633 nm

S2387-16R

S2387-33R

320 to 1100 960

0.58

S2387-66R

S2387-1010R

S2387-130R

* Window material, R: resin coating

0.33

0.37

4300 0.2 10 2.2 脳 10

-15

12000 0.05 5 3.1 脳 10

-15

5000 0.1 20 1.6 脳 10

-15

1

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