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S2386-18K Datasheet

  • S2386-18K

  • Si photodiode For visible to IR, general-purpose photometry

  • 4頁(yè)

  • HAMAMATSU

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PHOTODIODE
Si photodiode
S2386 series
For visible to IR, general-purpose photometry
Features
Applications
l
High sensitivity
l
Low dark current
l
High reliability
l
High linearity
l
Analytical equipment
l
Optical measurement equipment
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
鉃€/K
鉃?L
鉃?K
鉃?K
鉃?K
Package
(mm)
TO-18
TO-5
TO-8
Active
area size
(mm)
1.1 脳 1.1
2.4 脳 2.4
3.6 脳 3.6
3.9 脳 4.6
5.8 脳 5.8
Effective
active area
(mm
2
)
1.2
5.7
13
17.9
33
30
-40 to +100
-55 to +125
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(擄C)
(擄C)
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
Terminal
Dark
Short circuit
Temp. Rise time capacitance Shunt
current coefficient
resistance
tr
current
Ct
I
D
R
=0 V
Rsh
Isc
V
R
=10 m V of I
D
V
V
R
=0 V V
R
=10 mV
Type No.
100
lx
T
CID
R
L
=1 k鈩?/div>
Max.
f=10 kHz
GaP H e- N e GaAs
Min. Typ.
位p
LED laser LE D Min. Typ.
560 nm 633 nm 930 nm (碌A(chǔ)) (碌A(chǔ)) (pA) (times/擄 C) (碌s)
(G鈩? (G鈩?
(nm)
(nm)
(pF)
S2386-18K
1
1.3
2
0.4
140
5 100
S2386-18L
4
5.7
S2386-5K
4.4 6.0
5
1.8
730
2 50
320 to 1100 960 0.6 0.38 0.43 0.59
1.12
S2386-44K
9.6 12
20
3.6
1600 0.5
25
S2386-45K
12
17
30
5.5
2300 0.3
S2386-8K
26
33
50
10
4300 0.2 10
* Window material K: borosilicate glass, L: lens type borosilicate glass
Spectral Peak
response sensitivity
range wavelength
位
位p
Photo sensitivity
S
(A/W)
NEP
V
R
=0 V
位=位p
(W/Hz
1/2
)
6.8 脳 10
-16
9.6 脳 10
-16
1.4 脳 10
-15
2.1 脳 10
-15
1

S2386-18K相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Si APD Low bias operation, for 800 nm band
    HAMAMATSU
  • 英文版
    Si APD Low bias operation, for 800 nm band
    Hamamatsu Corpo...
  • 英文版
    Si APD Low bias operation, for 800 nm band
    HAMAMATSU
  • 英文版
    Si APD Low bias operation, for 800 nm band
    Hamamatsu Corpo...
  • 英文版
    Si APD Low bias operation, for 800 nm band
    HAMAMATSU
  • 英文版
    Si APD Low bias operation, for 800 nm band
    Hamamatsu Corpo...
  • 英文版
    Si APD Low bias operation, for 800 nm band
    HAMAMATSU
  • 英文版
    Si APD Low bias operation, for 800 nm band
    Hamamatsu Corpo...
  • 英文版
    Si APD Low bias operation, for 800 nm band
    HAMAMATSU
  • 英文版
    Si APD Low bias operation, for 800 nm band
    Hamamatsu Corpo...
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    HAMAMATSU
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    Hamamatsu Corpo...
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    HAMAMATSU
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    Hamamatsu Corpo...
  • 英文版
    Si APD Low bias operation, for 800 nm band
    HAMAMATSU
  • 英文版
    Si APD Low bias operation, for 800 nm band
    Hamamatsu Corpo...
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    HAMAMATSU
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    Hamamatsu Corpo...
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    HAMAMATSU
  • 英文版
    Si photodiode For visible to IR, general-purpose photometry
    Hamamatsu Corpo...

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