PHOTODIODE
Si photodiode
S1226 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
Applications
l
High UV sensitivity: QE 75 % (位=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
l
High reliability
l
Analytical equipment
l
Optical measurement equipment, etc.
s
General ratings / absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
鉃€/Q
鉃€/K
鉃?Q
鉃?K
鉃?Q
鉃?K
鉃?Q
鉃?K
Package
(mm)
TO-18
Active
area size
(mm)
1.1 脳 1.1
2.4 脳 2.4
TO-5
3.6 脳 3.6
TO-8
5.8 脳 5.8
13
33
Effective
active area
(mm
2
)
1.2
5.7
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(擄C)
(擄C)
-20 to +60
-55 to +80
-40 to +100
-55 to +125
-20 to +60
-55 to +80
-40 to +100
-55 to +125
5
-20 to +60
-55 to +80
-40 to +100
-55 to +125
-20 to +60
-55 to +80
-40 to +100
-55 to +125
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
Peak
Spectral sensi-
response tivity
range wave-
length
位
位p
Photo sensitivity
S
(A/W)
位p
200 nm
Short circuit
Dark
current
current
Isc
I
D
100
lx
V =10 m V
R
He-Ne
Min. Typ. Max.
laser
(碌A(chǔ)) (碌A(chǔ))
0.5
2.2
4.4
12
0.66
2.9
5.9
16
(pA)
2
5
1.12
10
20
1
2
380
950
1
10 3.6 脳 10
-15
Terminal
Temp.
Rise time capaci- Shunt
coeffi-
tr
tance resistance
cient
NEP
V
R
=0 V
Ct
Rsh
of I
D
R
L
=1 k鈩?V
R
=0 V V
R
=10 mV
T
CID
f=10 kHz
Min. Typ.
(times/擄 C) (碌s)
(pF) (G鈩? (G鈩? (W/Hz
1/2
)
0.15
0.5
35
160
5
2
50 1.6 脳 10
-15
20 2.5 脳 10
-15
Type No.
Min. Typ. 633 nm
(nm)
(nm)
190 to 1000
S1226-18BQ
0.10 0.12
320 to 1000
S1226-18BK
-
-
190 to 1000
S1226-5BQ
0.10 0.12
320 to 1000
S1226-5BK
-
-
720 0.36
0.34
190 to 1000
S1226-44BQ
0.10 0.12
320 to 1000
S1226-44BK
-
-
190 to 1000
S1226-8BQ
0.10 0.12
320 to 1000
S1226-8BK
-
-
* Window material, K: borosilicate glass, Q: quartz glass
0.5 5 5.0 脳 10
-15
1
2
3
4
