RTQ020N03
Transistors
2.5V Drive Nch MOS FET
RTQ020N03
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
TSMT6
1.0MAX
0.85
0.7
(1)
(2)
(3)
1pin mark
0.4
0.16
Each lead has same dimensions
Applications
Switching
Abbreviated symbol : QS
Packaging specifications
Package
Type
RTQ020N03
Code
Basic ordering unit (pieces)
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
鈭?
鈭?
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Mounted on a ceramic board
Symbol
V
DSS
V
GSS
I
D
I
DP
鈭?
I
S
I
SP
鈭?
P
D
鈭?
Tch
Tstg
Limits
30
12
鹵2.0
鹵8.0
1.0
8.0
1.25
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
Thermal resistance
Parameter
Channel to ambient
鈭?/div>
Mounted on a ceramic board
Symbol
Rth(ch-a)
鈭?/div>
Limits
100
Unit
擄C/W
0.3~0.6
Features
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
2.9
1.9
0.95 0.95
(6)
(5)
(4)
1.6
2.8
0~0.1
1/2
1
2
3
