BCD
RTD
100mA SILICON CARTRIDGE RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 60,000 VOLTS
FAST RECOVERY (RTD SERIES)
LOW LEAKAGE
EDI Type
Number
Peak
Reve rse V olta ge
PRV (V olts )
Max. Forward Voltage
o
Drop at 25 C And 100 mA
V
F
(Vol ts)
Leng th L
Fig. 3
BC D08
BC D10
BC D12
BC D15
BC D20
BC D25
BC D30
BC D35
BC D40
BC D45
BC D50
BC D60
RTD08
RTD10
RTD12
RTD15
RTD20
RTD25
RTD30
RTD35
RTD40
RTD45
RTD50
RTD60
STANDARD RECOVERY
8, 000
13
10,0 00
13
12,0 00
13
15,0 00
20
20,0 00
26
33
25,000
30,0 00
40
35,0 00
46
40,0 00
53
45,0 00
60
50,0 00
66
60,0 00
73
200 N AN OSE CO ND R EC OVE RY (F IG .4 )
8, 000
20
10,0 00
20
12,0 00
20
15,0 00
30
20,0 00
40
25,0 00
50
30,0 00
60
35,0 00
70
40,0 00
80
45,0 00
90
50,0 00
100
60,0 00
110
BCD SERIES
STANDARD
RECOVERY
1. 00
1. 00
1. 00
1. 63
2. 13
2. 63
3. 13
3. 63
4. 13
4. 63
5. 13
6. 13
1. 00
1. 00
1. 00
1. 63
2. 13
2. 63
3. 13
3. 63
4. 13
4. 63
5. 13
6.13
RTD SERIES
FAST
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
o
Max. DC Reverse Current @ PRV and 25 C, I
R
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
o
2
100
A
A
2
A
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
o
Max. DC Reverse Current @ PRV and 100 C, I
R
100
A
-55
o
C to +125
o
C
-55
o
C to +150
o
C
10 Amps
3 Amps
Max. Reverse Recovery Time , T
rr
(Fig.4)
200 nanosec
-55
o
C to +125
o
C
-55
o
C to +150
o
C
10 Amps
3 Amps
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
Ambient Operating Temperature Range,T
A
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
EDI reserves the right to change these specifications at any time without notice.
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