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RSS130N03 Datasheet

  • RSS130N03

  • Switching (30V, 13A)

  • 61.80KB

  • 4頁

  • ROHM

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RSS130N03
Transistors
Switching (30V, 13A)
RSS130N03
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
(8)
5.0鹵0.2
(5)
6.0鹵0.3
3.9鹵0.15
Max.1.75
Application
Power switching, DC/DC converter.
1.5鹵0.1
0.15
1.27
0.4鹵0.1
0.1
Each lead has same dimensions
Structure
Silicon N-channel
MOS FET
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Source Current
(Body Diode)
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
s
I
sp
P
D
Tch
Tstg
Limits
30
20
鹵13
鹵52
1.6
6.4
2
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
鈭?
鈭?
鈭?
Equivalent circuit
(8) (7) (6) (5)
(8)
(7)
(6)
(5)
鈭?/div>
2
0.5鹵0.1
(1)
(4)
0.2鹵0.1
鈭?/div>
1
(2)
(3)
(4)
(1) (2) (3) (4)
Total Power Dissipation
Channel Temperature
Storage Temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?/div>
2 Mounted on a ceramic board.
(1)
擄C
擄C
鈭?
ESD Protection Diode.
鈭?
Body
Diode.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
鈭?/div>
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Thermal resistance
(Ta = 25擄C)
Parameter
Channel to Ambient
鈭?/div>
Mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
62.5
Unit
擄C
/ W
鈭?/div>
1/3

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