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RQM2201DNSTL-E Datasheet

  • RQM2201DNSTL-E

  • Silicon N Channel MOS FET Power Switching

  • 120.83KB

  • 8頁(yè)

  • RENESAS

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RQM2201DNS
Silicon N Channel MOS FET
Power Switching
REJ03G1492-0200
Rev.2.00
Apr 16, 2007
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small, thin and leadless type package (3
脳
3 mm, t = 0.8 mm max.)
Two FET chips are mounted in one package
High density mounting
High speed switching. (Ciss = 200 pF typ)
V
DSS
鈮?/div>
60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 <HWSON-6>)
FET No.1
(Nch)
6
D
FET No.2
(Nch)
5
D
4
G
5
6
2
G
1
4
4
3 2
1
(Bottom view)
S
1
S
3
1, 3: Source
2, 4: Gate
5, 6: Drain
Notes:
1. Marking is 鈥淢2201鈥?
2. The following maximum ratings and electric characteristics are applied to both FET1 and
FET2.
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Pch
Note3
Tch
Tstg
Ratings
60
鹵12
2
8
2
1
1.5
150
鈥?5 to +150
Unit
V
V
A
A
A
W
W
擄C
擄C
Notes: 1. PW
鈮?/div>
10
碌s,
Duty cycle
鈮?/div>
1%
2. 1 Drive operation: When using the glass epoxy board (FR-4 40
脳
40
脳
1 mm)
3. 2 Drive operation: When using the glass epoxy board (FR-4 40
脳
40
脳
1 mm)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
Page 1 of 7

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