RH129
6.9V Precision Reference
DESCRIPTIO
ABSOLUTE
AXI U
RATI GS
The RH129 precision reference features excellent stability
over a wide range of voltage, temperature and operating
current conditions. The device achieves low dynamic
impedance by incorporating a high gain shunt regulator
around the Zener. The excellent noise performance of the
device is achieved by using a buried Zener design which
eliminates surface noise usually associated with ordinary
Zeners.
The wafer lots are processed to LTC's in-house Class S
flow to yield circuits usable in stringent military applica-
tions.
Reverse Breakdown Current ................................ 30mA
Forward Current..................................................... 2mA
Operating Temperature Range ............. 鈥?55擄C to 125擄C
Storage Temperature Range ................. 鈥?65擄C to 150擄C
Lead Temperature (Soldering, 10 sec).................. 300擄C
, LTC and LT are registered trademarks of Linear Technology Corporation.
BUR -I CIRCUIT
TOTAL DOSE BIAS CIRCUIT
PACKAGE INFORMATION
20V
15V
BOTTOM VIEW
10k
12.4k
1
2
RH1009 BI
RH129 TDBC1
H PACKAGE
2-LEAD TO-46 METAL CAN
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
Z
V
Z
I
R
V
Z
Temp
Reverse Breakdown Voltage
Reverse Breakdown
Voltage Change with Current
Temperature Coefficient
CONDITIONS
0.6mA I
R
(Preirradiation)
SUB-
鈥?55擄C T
A
125擄C
GROUP MIN TYP MAX
1
12
10
20
50
1
2
2, 3
2, 3
2, 3
SUB-
GROUP
NOTES
T
A
= 25擄C
MIN TYP MAX
6.7
7.2
14
UNITS
V
mV
mV
ppm/擄C
ppm/擄C
ppm/擄C
ppm/擄C
15mA
0.6mA I
R
15mA
1mA I
R
15mA
I
R
= 1mA, RH129A
RH129B
RH129C
1mA I
R
15mA
I
R
= 1mA
1mA I
R
15mA
10Hz f 10kHz
T
A
= 25擄C 鹵 0.1擄C,
I
R
= 1mA 鹵 0.3%
1
2
20
Change in TC
r
Z
en
V
Z
Time
Dynamic Impedance
RMS Noise
Long Term Stability
0.8
20
1
碌V
ppm/kHr
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
1
U
U
W
W W
U
W
U
U U
1
2
