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RFT3055LE Datasheet

  • RFT3055LE

  • 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Pow...

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  • INTERSIL   INTERSIL

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RFT3055LE
Data Sheet
August 1999
File Number
4537.3
2.0A, 60V, 0.150 Ohm, N-Channel, Logic
Level, ESD Rated, Power MOSFET
This product is an N-Channel power MOSFET manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49158.
Features
鈥?2.0A, 60V
鈥?r
DS(ON)
= 0.150鈩?/div>
鈥?2kV ESD Protected
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Thermal Impedance SPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFT3055LE
PACKAGE
SOT-223
3055L
BRAND
Symbol
D
NOTE: RFT3055LE is available only in tape and reel.
G
S
Packaging
SOT-223
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
8-143
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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