RFP18N10 Datasheet

IC型號：
RFP18N10
PDF描述：
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
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5頁
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Semiconductor

RFM18N08, RFM18N10,

RFP18N08, RFP18N10

18A, 80V and 100V, 0.100 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA17421.

BRAND

RFM18N08

RFM18N10

RFP18N08

RFP18N10

September 1998

[ /Title

(RFM18

N08,

RFM18

N10,

RFP18N

08,

RFP18N

10)

/Subject

(18A,

80V and

100V,

0.1 Ohm,

N-Chan-

nel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

Features

鈥?18A, 80V and 100V

鈥?r

DS(ON)

= 0.100鈩?/div>

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFM18N08

RFM18N10

RFP18N08

RFP18N10

PACKAGE

TO-204AA

TO-220AB

Symbol

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

DRAIN

(TAB)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

1446.1

5-1

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