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RFP12P10 Datasheet

  • RFP12P10

  • 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

  • 40.80KB

  • 5頁(yè)

  • INTERSIL   INTERSIL

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RFP12P08, RFP12P10
Data Sheet
June 1999
File Number
1495.2
12A, 80V and 100V, 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power 鏗乪ld effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Features
鈥?12A, 80V and 100V
鈥?r
DS(ON)
= 0.300鈩?/div>
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFP12P08
RFP12P10
PACKAGE
TO-220AB
TO-220AB
BRAND
RFP12P08
RFP12P10
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
4-161
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999.

RFP12P10 產(chǎn)品屬性

  • Fairchild Semiconductor

  • P-Channel

  • - 100 V

  • +/- 20 V

  • 12 A

  • 0.3 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220AB

  • 94 ns

  • - 55 C

  • 75 W

  • 90 ns

  • 144 ns

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