RFM10N50 Datasheet

IC型號(hào)：
RFM10N50
PDF描述：
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs
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35.21KB
PDF頁(yè)數(shù)：
4頁(yè)
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Semiconductor

RFM10N45,

RFM10N50

10A, 450V and 500V, 0.600 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA17435.

September 1998

Features

鈥?10A, 450V and 500V

鈥?r

DS(ON)

= 0.600鈩?/div>

[ /Title

(RFM10

N45,

RFM10

N50)

/Subject

(10A,

450V

and

500V,

0.600

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

204AA)

/Creator

()

/DOCIN

FO pdf-

mark

Ordering Information

PART NUMBER

RFM10N45

RFM10N50

PACKAGE

TO-204AA

BRAND

RFM10N45

RFM10N50

NOTE: When ordering, include the entire part number.

Symbol

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

[ /Page-

Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

1788.1

5-1

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