RFH10N50 Datasheet

IC型號(hào)：
RFH10N50
PDF描述：
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs
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RFH10N45, RFH10N50

Semiconductor

Data Sheet

October 1998

File Number 1629.2

10A, 450V and 500V, 0.600 Ohm,

N-Channel Power MOSFETs

Features

鈥?10A, 450V and 500V

[ /Title

These are N-Channel enhancement mode silicon gate

鈥?r

DS(ON)

= 0.600鈩?/div>

(RFH10

power 鏗乪ld effect transistors designed for applications such

鈥?Related Literature

as switching regulators, switching converters, motor drivers,

N45,

- TB334 鈥淕uidelines for Soldering Surface Mount

RFH10N

relay drivers, and drivers for high power bipolar switching

Components to PC Boards鈥?/div>

transistors requiring high speed and low gate drive power.

50)

These types can be operated directly from integrated circuits.

/Subject

Symbol

Formerly developmental type TA17435.

(10A,

450V

Ordering Information

and

PART NUMBER

PACKAGE

BRAND

500V,

RFH10N45

TO-218AC

RFH10N45

0.600

RFH10N50

TO-218AC

RFH10N50

Ohm,

N-Chan-

NOTE: When ordering, include the entire part number.

nel

Power

Packaging

MOS-

JEDEC TO-218AC

FETs)

SOURCE

/Author

DRAIN

()

GATE

/Key-

words

(Harris

Semi-

conduc-

tor,

DRAIN

(FLANGE)

N-Chan-

nel

Power

MOS-

FETs,

TO-

218AC)

/Creator

()

/DOCIN

FO pdf-

mark

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

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