RFD8P06E, RFD8P06ESM, RFP8P06E
Data Sheet
July 1999
File Number
3937.5
8A, 60V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate
ESD protection and are designed to withstand 2kV (Human
Body Model) of ESD.
Formerly developmental type TA49044.
Features
鈥?8A, 60V
鈥?r
DS(ON)
= 0.300鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?2kV ESD Protected
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
RFP8P06E
RFD8P06ESM
RFD8P06E
PACKAGE
TO-220AB
TO-252AA
TO-251AA
BRAND
RFP8P06E
D8P06E
D8P06E
S
G
NOTE: When ordering, use the entire part number. Add the suf鏗亁 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RFD8P06ESM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-117
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright 漏 Intersil Corporation 1999.
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