RFD8P06LE, RFD8P06LESM, RFP8P06LE
Data Sheet
July 1999
File Number
4273.1
8A, 60V, 0.300 Ohm, ESD Rated, Logic
Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49203.
Features
鈥?8A, 60V
鈥?r
DS(ON)
= 0.300鈩?/div>
鈥?2kV ESD Protected
鈥?Temperature Compensating PSPICE
廬
Model
鈥?PSPICE Thermal Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
Ordering Information
PART NUMBER
RFD8P06LE
RFD8P06LESM
RFP8P06LE
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
F8P6LE
F8P6LE
FP8P06LE
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD8P06LESM9A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
7-11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
next