RFD7N10LE, RFD7N10LESM
Data Sheet
October 1999
File Number
3598.3
7A, 100V, 0.300 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel power MOSFETs are manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49046.
Features
鈥?7A, 100V
鈥?r
DS(ON)
= 0.300鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Can be Driven Directly from CMOS, NMOS, TTL Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFD7N10LE
RFD7N10LESM
PACKAGE
TO-251AA
TO-252AA
7N10L
7N10LE
BRAND
Symbol
D
G
NOTE: When ordering, use the entire part number. Add suffix 9A to ob-
tain the TO-252AA variant in the tape and reel, i.e., RFD7N10LESM9A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
(FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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