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RFD16N06SM Datasheet

  • RFD16N06SM

  • 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

  • 7頁

  • INTERSIL   INTERSIL

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Semiconductor
RFD16N06,
RFD16N06SM
16A, 60V, 0.047 Ohm,
N-Channel Power MOSFET
Description
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA09771.
September 1998
Features
鈥?16A, 60V
鈥?r
DS(ON)
= 0.047鈩?/div>
鈥?/div>
Temperature Compensating
PSPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
[ /Title
(RFD16
N06,
RFD16
N06SM)
/Sub-
ject
(16A,
60V,
0.047
Ohm,
N-Chan-
nel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
Power
MOS-
FET,
TO-
251AA,
TO-
252AA)
/Cre-
Symbol
Ordering Information
PART NUMBER
RFD16N06
RFD16N06SM
PACKAGE
TO-251AA
TO-252AA
BRAND
F16N06
F16N06
SOURCE
GATE
DRAIN
NOTE: When ordering, use the entire part number. Add suf鏗亁 9A to ob-
tain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
4087.1
5-1

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